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| to ? 92m 1. collector 2. base 3. emitter to ? 92mod 1. emitter 2. collector 3. base to-92mod plastic-encapsulate transistors 2SD1247 transistor (npn) features z low saturation voltage z large current capacity and wide aso maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 100a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100a,i c =0 6 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =2v, i c =100ma 100 560 dc current gain h fe(2) v ce =2v, i c =1.5a 65 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =75ma 0.4 v collector-emitter saturation voltage v be(sat) i c =1.5a,i b =75ma 1.2 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 19 pf transition frequency f t v ce =10v,i c =50ma 150 mhz classification of h fe rank r s t u range 100-200 140-280 200-400 280-560 symbol parameter value unit v cbo collector-base voltage 30 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 6 v i c collector current 2.5 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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